HOT ! 山崎瞬平（共）編／酸化物半導体CAAC-IGZOの物理と技術：LSIへの応用 IGZOの約10倍の電界効果移動度を持つ酸化物半導体を高知工科大が開発 洋書

新着情報: 超高解像度テレビ用材料の高い電子移動度の起源を解明。IGZOの約10倍の電界効果移動度を持つ酸化物半導体を高知工科大が開発。IGZOの約10倍の電界効果移動度を持つ酸化物半導体を高知工科大が開発。Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Lsi (Wiley-sid Series in Display Technology)2017 John Wiley and Sons酸化物半導体IGZOのLSI応用をまとめた書籍です。東大ら，IGZOでプロセッサに混載可能なメモリ開発 | OPTRONICS ONLINE。This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.